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	1	Device simulation of high-performance SiGe heterojunction bipolar transistors Korn, Julian. - Berlin : Technische Universität Berlin, 2018
	2	SiGe Heterojunction Bipolar Transistors Ashburn, Peter. - New York, NY : John Wiley & Sons, 2003
	3	Self-aligned Ti germanosilicide formation on a polycrystalline Si/SiGe/Si extrinsic base for SiGe heterojunction bipolar transistors Enthalten in Journal of electronic materials Bd. 32, Nr. 11, date:11.2003: 1349-1356
	4	The behavior of Ti silicidation on Si/SiGe/Si base and its effect on base resistance and fmax in SiGe hetero-junction bipolar transistors Enthalten in Journal of materials science / Materials in electronics Bd. 12, Nr. 8, date:8.2001: 467-472
	5	Influence of the oxygen content in SiGe on the parameters of Si/SiGe heterojunction bipolar transistors Enthalten in Journal of electronic materials Bd. 27, Nr. 9, date:9.1998: 1022-1026
	6	Development of integrated circuits for the reception path based on the SiGe-heterojunction bipolar transistors for the frequency range of 57–64 GHz Enthalten in Russian microelectronics Bd. 44, 14.11.2015, Nr. 7, date:12.2015: 478-481
	7	Highly biomimetic spiking neuron using SiGe heterojunction bipolar transistors for energy-efficient neuromorphic systems Enthalten in Scientific reports Bd. 14, 10.4.2024, Nr. 1, date:12.2024: 1-8
	8	SiGe Heterojunction Bipolar Transistors Enthalten in Materials Research Society: MRS online proceedings library Bd. 220, 24.10.1991, Nr. 1, date:12.1991: 421-431
	9	Simulation of effects of emitter and collector widths on performance of silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) Enthalten in Journal of computational electronics Bd. 17, 26.3.2018, Nr. 2, date:6.2018: 682-688
	10	The Analysis of the Polysilicon base Position of the Thermal Resistance and the Self Heating Effects of 0.13 µm SiGe Heterojunction Bipolar Transistors Enthalten in Russian microelectronics Bd. 51, 7.6.2022, Nr. 3, date:6.2022: 192-198

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