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1 |
Device simulation of high-performance SiGe heterojunction bipolar transistors
Korn, Julian. - Berlin : Technische Universität Berlin, 2018
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2 |
Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits
Tran-Hoang-Hung. - Dresden : TUDpress, 2007
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3 |
SiGe Heterojunction Bipolar Transistors
Ashburn, Peter. - New York, NY : John Wiley & Sons, 2003
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4 |
Self-aligned Ti germanosilicide formation on a polycrystalline Si/SiGe/Si extrinsic base for SiGe heterojunction bipolar transistors
Enthalten in Journal of electronic materials Bd. 32, Nr. 11, date:11.2003: 1349-1356
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5 |
The behavior of Ti silicidation on Si/SiGe/Si base and its effect on base resistance and fmax in SiGe hetero-junction bipolar transistors
Enthalten in Journal of materials science / Materials in electronics Bd. 12, Nr. 8, date:8.2001: 467-472
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6 |
Influence of the oxygen content in SiGe on the parameters of Si/SiGe heterojunction bipolar transistors
Enthalten in Journal of electronic materials Bd. 27, Nr. 9, date:9.1998: 1022-1026
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7 |
Development of integrated circuits for the reception path based on the SiGe-heterojunction bipolar transistors for the frequency range of 57–64 GHz
Enthalten in Russian microelectronics Bd. 44, 14.11.2015, Nr. 7, date:12.2015: 478-481
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8 |
Highly biomimetic spiking neuron using SiGe heterojunction bipolar transistors for energy-efficient neuromorphic systems
Enthalten in Scientific reports Bd. 14, 10.4.2024, Nr. 1, date:12.2024: 1-8
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9 |
SiGe Heterojunction Bipolar Transistors
Enthalten in Materials Research Society: MRS online proceedings library Bd. 220, 24.10.1991, Nr. 1, date:12.1991: 421-431
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10 |
Simulation of effects of emitter and collector widths on performance of silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs)
Enthalten in Journal of computational electronics Bd. 17, 26.3.2018, Nr. 2, date:6.2018: 682-688
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