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Link zu diesem Datensatz | https://d-nb.info/1331392314 |
Art des Inhalts | Konferenzschrift |
Titel | The Physics of Semiconductor Devices : Proceedings of IWPSD 2021 / edited by Rajendra Singh, Madhusudan Singh, Ashok Kapoor |
Person(en) |
Singh, Rajendra (Herausgeber) Singh, Madhusudan (Herausgeber) Kapoor, Ashok (Herausgeber) |
Organisation(en) | SpringerLink (Online service) (Sonstige) |
Ausgabe | 1st ed. 2024 |
Verlag | Singapore : Springer Nature Singapore, Imprint: Springer |
Zeitliche Einordnung | Erscheinungsdatum: 2024 |
Umfang/Format | Online-Ressource, XXII, 410 p. 253 illus., 229 illus. in color. : online resource. |
Andere Ausgabe(n) |
Printed edition:: ISBN: 978-981-9715-70-1 Printed edition:: ISBN: 978-981-9715-72-5 Printed edition:: ISBN: 978-981-9715-73-2 |
Inhalt | Impact of Various Device Parameters on the Series Resistance of Perovskite Solar Cell -- Performance Investigation of Alkali Metal Fluorides as Alternate Electron Selective Contacts for TOPCon Solar Cells -- Computational Analysis of Antireflection Coatings for Semiconductor Solar Cells -- Effect of O2 Partial Pressure on Valence Band Maxima of HfO2 Thin Film -- Dependence of analog performance and linearity with channel doping concentration for an InGaAs MOSFET -- Effect of Channel Epilayer Thickness on Low Power Analog Operation of Asymmetric U-Shaped pTFET -- Effect of Helium gas addition to SF6/O2 chemistry for SiC dry etching in AlGaN/GaN/SiC HEMTs -- Modeling of High and Low Resistant States inSingle Defect Atomristors -- Design of Vertical Superjunction AlGaN/GaN HEMT: A TCAD-based Approach -- Effect on photo-absorbance and optical energy-gap of Al2O3 thin film after deposition of Ag thin film -- Thermometry across switching oxide layer in ReRAM device -- Effective Mobility Extraction of GaN-HEMTusing S-parameter -- Stress Dependent Electrical Characteristics of Flexible a-IGZO TFTs -- Modeling of Negative Capacitance Field effect transistors based on different ferroelectric materials -- Comparative Investigation of Single and Double Channel AlGaN/GaN HEMTs for LNAs -- ZnO nanorods orientation control with seedless hydrothermal growth and finding suitable morphology with simulation for tactile sensors -- A Comparative Demonstration of a 2D MXene-based Asymmetric Memristor Using Pristine and Nanohybrid Ti3C2Tx -- Modelling and simulation of a thin-film bulk acoustic resonator (FBAR) based gas sensor -- Design and Simulation of an open EWOD based Digital Microfluidic Device for Droplet Actuation using COMSOL -- A Capacitive Transducer for film Thickness Measurement -- Performance Projection of Stacked Silicon Nanosheet-FET Architectures for Future Technology Node -- Determination of Coupling Coefficient in Large Optical Cavity Distributed Feedback Laser structure with metal surfacegrating -- Design and Simulation of Stepped Microcantilevers for Energy Harvesting Applications -- Lowering Motional Impedance in Micromachined Frequency-Synthesizer Using Ultra-thin (SiO2 ~30 nm) Internal Dielectric -- Thermally Synthesized Cu/CuO/Cu(sheet) with Bipolar Resistive Switching -- Dynamic tuning of ENZ region of ITO and sensing using a tapered optical fiber -- Identifying the Recombination Zone in Perovskite Solar Cells -- High speed etching of silicon in NaOH-based solution using Surface to Volume Ratio (SVR) -- Parylene membrane transfer on PDMS microchannel for microvalve fabrication -- RF Analysis of Tapered Angle Hetero-junction Dopingless TFET for low power applications -- Impact of pocket doped Mg2Si/Si hetrojunction Ge gated TFET for low optical power detection at 1550 nm -- MEMS acoustic sensor for low frequency applications -- Aptamer functionalized CVD grown monolayer WS2 based FETs for real-time detection of E. coli -- Superconducting stub tuner impedance matching circuitfor high-frequency measurements of nanoscale devices -- Spice Simulation of Solution Processed Bottom Gate Bottom Contact Organic Thin Film Transistor -- Inducing Phase transitions in MoS2 by Ionic liquid gating -- Ultrasensitive reduced vanadium dioxidebased MEMS Pirani gauge with extended dynamic range -- Lower Drying Temperature Process for Hole Transport Layer PEDOT: PSS in PCDTBT: PCBM Devices -- Electrical Performance of Protein-based Flexible MIM Structure Fabricated at Room Temperature for Proteotronic Applications -- Estimation of asymmetrically distributed anti-phase domains ratio in GaAs/Si(100) epitaxial layers using high resolution X-ray diffraction -- A Vertical GaN Split Gate Trench MOSFET Device with Reduced Switching Energy Losses -- Optimization of Negative Differential Conductance (NDC) Point for Multi Gate Devices Considering Self Heating Effects using Surface to Volume Ratio (SVR) -- Performance of Strained-SiGe in FinFETs and Stacked Nanosheet FETs for Sub-7nm TechnologyNode -- Thermal Admittance Spectroscopy of AlGaN/GaN HEMT Structure -- Numerical Modelling of WO3-based Memristive System for Neuromorphic Computation -- Flexible Organic Field-Effect Transistor using Natural Protein as a Gate Dielectric for Green Electronics -- Design and Analysis of Cs3Sb2Br9/Si Tandem Solar Cell using SCAPS-1D -- One-pot preparation of Fe/Cu catalytic solution for the growth of carbon nanotubes for use in gas sensor and field emission devices |
Persistent Identifier |
URN: urn:nbn:de:101:1-2406010458150.386257434080 DOI: 10.1007/978-981-97-1571-8 |
URL | https://doi.org/10.1007/978-981-97-1571-8 |
ISBN/Einband/Preis | 978-981-97-1571-8 |
Sprache(n) | Englisch (eng) |
Beziehungen | Springer Proceedings in Physics ; 306 |
DDC-Notation | 530.09 (maschinell ermittelte DDC-Kurznotation) |
Sachgruppe(n) | 530 Physik |
Online-Zugriff | Archivobjekt öffnen |
