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Service hours in Frankfurt am Main from 1 December 2025: Monday to Friday 9:00-18:00 and Saturday 10:00-16:00

Dienstag 9. Dezember 2025: Die Lesesäle der Deutschen Nationalbibliothek in Leipzig öffnen wegen einer Personalversammlung erst ab 13 Uhr. // Tuesday 9 December 2025: The reading rooms of the German National Library in Leipzig will open at 13:00 due to a staff assembly.

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	131	Variation of electronic density in the superconducting phase transition in Nb3Al Enthalten in Physics of the solid state Bd. 46, Nr. 2, date:2.2004: 231-233
	132	Electronic states and vibration spectra of CdTe/ZnTe quantum dot superlattices Enthalten in Physics of the solid state Bd. 46, Nr. 1, date:1.2004: 173-175
	133	Transport Properties of Solid Electrolytes: Effect of the Isotope Composition of Lithium Charge Carriers Enthalten in Russian journal of electrochemistry Bd. 40, Nr. 10, date:10.2004: 1029-1034
	134	Measuring Transport Numbers for Lithium Isotopes in the Li3AlN2 Solid Electrolyte Enthalten in Russian journal of electrochemistry Bd. 40, Nr. 6, date:6.2004: 670-673
	135	Hydrolysis of Heparin by the Immobilized Enzymatic Complex from Streptomyces kurssanovii Enthalten in Applied biochemistry and microbiology Bd. 40, Nr. 4, date:7.2004: 365-369
	136	Synthesis of Tertiary Bisphosphine Oxides from Methylacetylene and Secondary Phosphine Oxides Enthalten in Russian journal of organic chemistry Bd. 40, Nr. 1, date:1.2004: 129-130
	137	Growth of calcium oxalate monohydrate on uric acid crystals at sustained supersaturation Enthalten in Crystal research and technology Bd. 39, 2004, Nr. 8: 699-704. 6 S.
	138	Spherulitic growth of single (Gd & Pr) and mixed (Di) rare earth heptamolybdates in silica gels Enthalten in Journal of materials science Bd. 39, Nr. 5, date:3.2004: 1743-1749
	139	Effect of low-temperature annealing on electrical properties of n-HgCdTe Enthalten in Semiconductors Bd. 38, Nr. 10, date:10.2004: 1172-1175
	140	Magnetic-field dependences of the conductivity and hall factor in MBE-grown CdXHg1−X Te layers Enthalten in Semiconductors Bd. 38, Nr. 10, date:10.2004: 1168-1171

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