|
41 |
Spatial breathing of the exciton distribution in ZnSe quantum wells Enthalten in Physica status solidi / B / Basic solid state physics Bd. 241, 2004, Nr. 3: 579-582. 4 S.
|
|
|
42 |
Optical investigation of AlGaN/GaN quantum wells and superlattices Enthalten in Physica status solidi / A / Applications and materials science Bd. 201, 2004, Nr. 10: 2251-2258. 8 S.
|
|
|
43 |
500–560 nm Laser Emission from Quaternary CdZnSSe Quantum Wells Enthalten in Physica status solidi / B / Basic solid state physics Bd. 229, 2002, Nr. 2: 935-942. 8 S.
|
|
|
44 |
500–600 nm Laser Emission from Quaternary CdZnSSe Quantum Wells Enthalten in Physica status solidi / B / Basic solid state physics Bd. 229, 2002, Nr. 2: 615-615. 1 S.
|
|
|
45 |
Photoluminescence of Excitons in In x Ga 1—x N/In y Ga 1—y N Multiple Quantum Wells Enthalten in Physica status solidi / A / Applications and materials science Bd. 190, 2002, Nr. 1: 161-166. 6 S.
|
|
|
46 |
Carrier-induced changes in the phase resolved reflection of GaAs quantum wells Enthalten in The European physical journal / B / Condensed matter and complex systems Bd. 30, Nr. 3, date:12.2002: 303-312
|
|
|
47 |
Time‐Resolved Photoluminescence Studies of Cubic and Hexagonal GaN Quantum Dots Enthalten in Physica status solidi / B / Basic solid state physics Bd. 224, 2001, Nr. 1: 13-16. 4 S.
|
|
|
48 |
Near‐Field Optical Spectroscopy of Carrier Exchange between Quantum Wells and Single GaAs Quantum Wires Enthalten in Physica status solidi / B / Basic solid state physics Bd. 204, 2001, Nr. 1: 247-250. 4 S.
|
|
|
49 |
ZnSe‐Based Laser Diodes and LEDs Grown on ZnSe and GaAs Substrates Enthalten in Physica status solidi / B / Basic solid state physics Bd. 202, 2001, Nr. 2: 683-693. 11 S.
|
|
|
50 |
Optical Properties and Lasing in (In, Al) GaN Structures Enthalten in Physica status solidi / A / Applications and materials science Bd. 183, 2001, Nr. 1: 105-109. 5 S.
|
|