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3331 |
Effect of fully strained AlN nucleation layer on the AlN/SiC interface and subsequent GaN growth on 4H–SiC by MOVPE
Enthalten in Journal of materials science / Materials in electronics Bd. 30, 28.9.2019, Nr. 20, date:10.2019: 18910-18918
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3332 |
Effect of Grain Sizes on Thermoelectric Properties of Extruded Samples of Bi0.5Sb1.5Te3 Solution
Enthalten in Russian physics journal Bd. 62, 20.8.2019, Nr. 4, date:8.2019: 664-672
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3333 |
Effect of Halogen Passivation of a Surface on Radiative and Nonradiative Transitions in Silicon Nanocrystals
Enthalten in Journal of experimental and theoretical physics Bd. 129, 23.9.2019, Nr. 2, date:8.2019: 234-240
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3334 |
Effect of Lateral Electric Field on the Transition Energies of Heavy Hole State and Light Hole State in a Semiconductor Quantum Dot
Enthalten in Journal of electronic materials Bd. 48, 5.8.2019, Nr. 10, date:10.2019: 6716-6723
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3335 |
Effect of mechanical deformation and annealing on the evolution of c-axis texture of Bi1.6Pb0.4Sr2Ca2Cu3Oz superconductor hot-isostatic-press cladded onto a Ag substrate
Enthalten in Journal of materials science Bd. 29, 12.9.2004, Nr. 16, date:8.1994: 4306-4313
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3336 |
Effect of temperature on the magnetic properties of strontium hexaferrite synthesized by the Pechini method
Enthalten in Applied physics / A / Materials science & processing Bd. 125, 19.9.2019, Nr. 10, date:10.2019: 1-8
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3337 |
Eu2+ luminescence in alkali sulphate lattices
Enthalten in Journal of materials science Bd. 26, 1.1.1991, Nr. 4, date:2.1991: 1069-1072
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3338 |
Experimental and Theoretical In Situ Spectral Magneto-Ellipsometry Study of Layered Ferromagnetic Structures
Enthalten in JETP letters Bd. 110, 17.10.2019, Nr. 3, date:8.2019: 166-172
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3339 |
Fabrication and characterization of YBa2Cu3O7−x/Sn composite superconductors
Enthalten in Journal of materials science Bd. 28, 15.2.1993, Nr. 15, date:8.1993: 4205-4211
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3340 |
Fano resonances based on plasmonic square resonator with high figure of merits and its application in glucose concentrations sensing
Enthalten in Optical and quantum electronics Bd. 51, 17.8.2019, Nr. 9, date:9.2019: 1-16
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