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	171	Analysis of Time‐Resolved Donor–Acceptor‐Pair Recombination in MBE and MOVPE Grown GaN: Mg Enthalten in Physica status solidi / B / Basic solid state physics Bd. 228, 2001, Nr. 2: 379-383. 5 S.
	172	Time‐Resolved Photoluminescence Measurements on ZnSe–ZnTe Superlattices Enthalten in Physica status solidi / B / Basic solid state physics Bd. 202, 2001, Nr. 2: 1013-1020. 8 S.
	173	Dynamical Properties of Optical Excitations in II–VI Structures Enthalten in Physica status solidi / B / Basic solid state physics Bd. 202, 2001, Nr. 2: 873-889. 17 S.
	174	Correlation of Barrier Height and Nonradiative Carrier Recombination and the Consequences for Optical Gain in GaN Based Laser Structures Enthalten in Physica status solidi / A / Applications and materials science Bd. 188, 2001, Nr. 1: 109-112. 4 S.
	175	Influence of the Transverse and Lateral Waveguide on the Far Field Pattern in GaN Based Laser Structures Enthalten in Physica status solidi / A / Applications and materials science Bd. 188, 2001, Nr. 1: 65-68. 4 S.
	176	About the surface characteristics of natural fibres Enthalten in Macromolecular materials and engineering Bd. 283, 2000, Nr. 1: 132-139. 8 S.
	177	Physical model of interface and interphase performance in composite materials and bonded polymers Enthalten in Die angewandte makromolekulare Chemie Bd. 272, 2000, Nr. 1: 51-56. 6 S.
	178	How Correlated Coulomb Quantum Kinetics Affects the Optical Phase of Four‐Wave‐Mixing Signals Enthalten in Physica status solidi / B / Basic solid state physics Bd. 221, 2000, Nr. 1: 205-209. 5 S.
	179	Gain Saturation in (In,Ga) N/GaN/(Al,Ga) N Laser Structures Enthalten in Physica status solidi / A / Applications and materials science Bd. 180, 2000, Nr. 1: 391-396. 6 S.
	180	Optical Spectroscopy of Mg‐ and C‐Related Donor and Acceptor Levels in GaN Grown by MBE Enthalten in Physica status solidi / B / Basic solid state physics Bd. 216, 1999, Nr. 1: 557-560. 4 S.

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