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	151	Effect of fully strained AlN nucleation layer on the AlN/SiC interface and subsequent GaN growth on 4H–SiC by MOVPE Enthalten in Journal of materials science / Materials in electronics Bd. 30, 28.9.2019, Nr. 20, date:10.2019: 18910-18918
	152	Effect of Grain Sizes on Thermoelectric Properties of Extruded Samples of Bi0.5Sb1.5Te3 Solution Enthalten in Russian physics journal Bd. 62, 20.8.2019, Nr. 4, date:8.2019: 664-672
	153	Effect of Halogen Passivation of a Surface on Radiative and Nonradiative Transitions in Silicon Nanocrystals Enthalten in Journal of experimental and theoretical physics Bd. 129, 23.9.2019, Nr. 2, date:8.2019: 234-240
	154	Effect of La3+ ions substituted M-type barium hexa-ferrite on magnetic, optical, and dielectric properties Enthalten in Applied physics / A / Materials science & processing Bd. 125, 31.8.2019, Nr. 9, date:9.2019: 1-14
	155	Effect of Lateral Electric Field on the Transition Energies of Heavy Hole State and Light Hole State in a Semiconductor Quantum Dot Enthalten in Journal of electronic materials Bd. 48, 5.8.2019, Nr. 10, date:10.2019: 6716-6723
	156	Effect of mechanical deformation and annealing on the evolution of c-axis texture of Bi1.6Pb0.4Sr2Ca2Cu3Oz superconductor hot-isostatic-press cladded onto a Ag substrate Enthalten in Journal of materials science Bd. 29, 12.9.2004, Nr. 16, date:8.1994: 4306-4313
	157	Effect of Shock Waves on Structural, Thermophysical and Dielectric Properties of Glycine Phosphate (GPI) Crystal Enthalten in Journal of electronic materials Bd. 48, 22.8.2019, Nr. 11, date:11.2019: 7216-7225
	158	Effect of temperature on the magnetic properties of strontium hexaferrite synthesized by the Pechini method Enthalten in Applied physics / A / Materials science & processing Bd. 125, 19.9.2019, Nr. 10, date:10.2019: 1-8
	159	Effects of hyperscaling violation and dynamical exponents on heavy quark potential and jet quenching parameter Enthalten in The European physical journal / C / Particles and fields Bd. 79, 29.7.2019, Nr. 7, date:7.2019: 1-10
	160	Electrical properties and phase transition of Ge1−xSnxSe2.5 thin films Enthalten in Journal of materials science Bd. 30, 13.9.2004, Nr. 11, date:6.1995: 2838-2842

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