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Artikel 191 Do they like it dirty? Wie Carcinus maenas kurzfristig auf Verschmutzung reagiert
Enthalten in Proceedings in marine biology Bd. Volume 3, Nr. Number 4
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Artikel 192 Dual photoluminescence emission of Er3+, Yb3+ and Er3+/Yb3+ doped La3Ga5.5Nb0.5O14 ceramics under UV and IR excitation
Enthalten in Journal of materials science / Materials in electronics Bd. 30, 28.8.2019, Nr. 18, date:9.2019: 17424-17431
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Artikel 193 Dynamics of a Statically Unbalanced Rotor with an Elliptic Automatic Ball Balancer
Enthalten in Sankt-Peterburgskij gosudarstvennyj universitet: Vestnik / Mathematics Bd. 52, 4.9.2019, Nr. 3, date:7.2019: 301-308
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Artikel 194 Effect of addition of barium, tin and silver on Bi-Sr-Ca-Cu-O ceramic superconductors
Enthalten in Journal of materials science Bd. 31, 1.4.1996, Nr. 7, date:4.1996: 1735-1740
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Artikel 195 Effect of defects on the electronic structure of a PbI2/MoS2 van der Waals heterostructure: A first-principles study
Enthalten in Science China / Physics, mechanics & astronomy Bd. 63, 23.10.2019, Nr. 3, date:3.2020: 1-6
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Artikel 196 Effect of fully strained AlN nucleation layer on the AlN/SiC interface and subsequent GaN growth on 4H–SiC by MOVPE
Enthalten in Journal of materials science / Materials in electronics Bd. 30, 28.9.2019, Nr. 20, date:10.2019: 18910-18918
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Artikel 197 Effect of Grain Sizes on Thermoelectric Properties of Extruded Samples of Bi0.5Sb1.5Te3 Solution
Enthalten in Russian physics journal Bd. 62, 20.8.2019, Nr. 4, date:8.2019: 664-672
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Artikel 198 Effect of Halogen Passivation of a Surface on Radiative and Nonradiative Transitions in Silicon Nanocrystals
Enthalten in Journal of experimental and theoretical physics Bd. 129, 23.9.2019, Nr. 2, date:8.2019: 234-240
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Artikel 199 Effect of La3+ ions substituted M-type barium hexa-ferrite on magnetic, optical, and dielectric properties
Enthalten in Applied physics / A / Materials science & processing Bd. 125, 31.8.2019, Nr. 9, date:9.2019: 1-14
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Artikel 200 Effect of Lateral Electric Field on the Transition Energies of Heavy Hole State and Light Hole State in a Semiconductor Quantum Dot
Enthalten in Journal of electronic materials Bd. 48, 5.8.2019, Nr. 10, date:10.2019: 6716-6723
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