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261 |
Reversing the Resistivity Contrast in the Phase‐Change Memory Material GeSb 2 Te 4 Using High Pressure
Enthalten in Advanced electronic materials Bd. 1, 2015, Nr. 12. 7 S.
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262 |
Amorphous and highly nonstoichiometric titania (TiOx) thin films close to metal-like conductivity
Leichtweiss, Thomas. - Aachen : Universitätsbibliothek der RWTH Aachen, 2014
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263 |
Phase change materials and phase change memory
Raoux, Simone. - Aachen : Universitätsbibliothek der RWTH Aachen, 2014
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264 |
Bindungseigenschaften lokaler Strukturmotive in amorphem GeTe †
Enthalten in Angewandte Chemie Bd. 126, 2014, Nr. 40: 10993-10997. 5 S.
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265 |
Innentitelbild: Bindungseigenschaften lokaler Strukturmotive in amorphem GeTe (Angew. Chem. 40/2014)
Enthalten in Angewandte Chemie Bd. 126, 2014, Nr. 40: 10720-10720. 1 S.
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266 |
Bonding Nature of Local Structural Motifs in Amorphous GeTe †
Enthalten in Angewandte Chemie / International edition Bd. 53, 2014, Nr. 40: 10817-10820. 4 S.
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267 |
Inside Cover: Bonding Nature of Local Structural Motifs in Amorphous GeTe (Angew. Chem. Int. Ed. 40/2014)
Enthalten in Angewandte Chemie / International edition Bd. 53, 2014, Nr. 40: 10548-10548. 1 S.
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268 |
A New Route to Low Resistance Contacts for Performance‐Enhanced Organic Electronic Devices
Enthalten in Advanced materials interfaces Bd. 1, 2014, Nr. 5. 8 S.
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269 |
Organic Electronics: A New Route to Low Resistance Contacts for Performance‐Enhanced Organic Electronic Devices (Adv. Mater. Interfaces 5/2014)
Enthalten in Advanced materials interfaces Bd. 1, 2014, Nr. 5. 1 S.
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270 |
Frontiers in Electronic Materials
Weinheim : Wiley-VCH, 2013, 1., Auflage, neue Ausg.
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