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	821	A First Approach to CVD Si 1– x Ge x Layer Growth by Means of Chemical Reaction Kinetics Enthalten in Crystal research and technology Bd. 27, 2006, Nr. 6: 773-784. 12 S.
	822	Defect Engineering and Gettering in a High‐voltage Substrate Technolgy Enthalten in Crystal research and technology Bd. 27, 2006, Nr. 1: 127-136. 10 S.
	823	Rapid Thermal Diffusion of Zinc in GaAs Enthalten in Crystal research and technology Bd. 26, 2006, Nr. 8: 981-986. 6 S.
	824	W. Scheler: Grundlagen der allgemeinen Pharmakologie. Unter Mitarbeit von R. Franke, W. Knorre, J. Lampe, R. Morgenstern. 2., überarbeitete und erweiterte Auflage, 712 Seiten, 223 Abb., 149 Tab. VEB Gustav Fischer Verlag, Jena 1980. Preis: 79,— M. Enthalten in Nahrung Bd. 25, 2006, Nr. 7: 704-704. 1 S.
	825	Equilibrium dopant incorporation in CVD silicon epitaxy Enthalten in Crystal research and technology Bd. 24, 2006, Nr. 1: 13-19. 7 S.
	826	J. L. Van Hemmen, I. Morgenstern (eds). Heidelberg Colloquium on Glassy Dynamics, Proceedings, Heidelberg 1986. Lecture Notes in Physics 275. Springer‐Verlag Berlin, Heidelberg 1987. 577 p., DM 97.—. ISBN 3–540–17777–9 Enthalten in Crystal research and technology Bd. 23, 2006, Nr. 3: 318-318. 1 S.
	827	Defect generation on mechanically surface defects before and after the oxidation (II). Dislocation generation at cracks Enthalten in Crystal research and technology Bd. 22, 2006, Nr. 2: 233-239. 7 S.
	828	Defect generation on mechanical surface defects before and after the oxidation (I). TEM investigations on the nucleation of oxidation stacking faults at mechanically induced weak surface defects Enthalten in Crystal research and technology Bd. 22, 2006, Nr. 1: 85-92. 8 S.
	829	Suppression of epitaxial silicon layer doping with boron in the presence of hydrogen chloride Enthalten in Crystal research and technology Bd. 22, 2006, Nr. 1: 75-83. 9 S.
	830	Decomposition equilibrium of arsine and low pressure doping of epitaxial CVD silicon Enthalten in Crystal research and technology Bd. 20, 2006, Nr. 12: 1583-1593. 11 S.

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