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831 - 840 von 990

	831	Time‐Resolved Photoluminescence Studies of Cubic and Hexagonal GaN Quantum Dots Enthalten in Physica status solidi / B / Basic solid state physics Bd. 224, 2001, Nr. 1: 13-16. 4 S.
	832	Near‐Field Optical Spectroscopy of Carrier Exchange between Quantum Wells and Single GaAs Quantum Wires Enthalten in Physica status solidi / B / Basic solid state physics Bd. 204, 2001, Nr. 1: 247-250. 4 S.
	833	ZnSe‐Based Laser Diodes and LEDs Grown on ZnSe and GaAs Substrates Enthalten in Physica status solidi / B / Basic solid state physics Bd. 202, 2001, Nr. 2: 683-693. 11 S.
	834	Optical Properties and Lasing in (In, Al) GaN Structures Enthalten in Physica status solidi / A / Applications and materials science Bd. 183, 2001, Nr. 1: 105-109. 5 S.
	835	Terahertz Linear and Nonlinear Dynamics in Confined Magnetoexcitons Enthalten in Physica status solidi / A / Applications and materials science Bd. 164, 2001, Nr. 1: 567-570. 4 S.
	836	Radiative Coupling in Single Quantum Wells and Bragg Structures Enthalten in Physica status solidi / B / Basic solid state physics Bd. 221, 2000, Nr. 1: 101-106. 6 S.
	837	Optical and Transport Properties of GaN/Al 0.15 Ga 0.85 N Quantum Wells Enthalten in Physica status solidi / A / Applications and materials science Bd. 178, 2000, Nr. 1: 73-78. 6 S.
	838	Characterization of undoped and silicon-doped InGaN/GaN single quantum wells Enthalten in Journal of electronic materials Bd. 29, Nr. 1, date:1.2000: 31-36
	839	Coherent Dynamics of Continuum and Excitonic States in Quantum Confined Systems Enthalten in Physica status solidi / B / Basic solid state physics Bd. 206, 1999, Nr. 1: 443-453. 11 S.
	840	Superradiant Coupling of Excitons in (In,Ga) As Multiple Quantum Wells Enthalten in Physica status solidi / B / Basic solid state physics Bd. 206, 1999, Nr. 1: 333-339. 7 S.

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