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	1	On the Growth, Structure, and Optical Reflection of Magnesium Silicide Films Grown on Porous Silicon under High-Vacuum Conditions Enthalten in Semiconductors 10.11.2023: 1-11
	2	Investigation of Structure, First Order Optical Susceptibility, Non-Linear Optical, Electrical Susceptibility Results, and IV Characterizations of Graphene Multilayer Enthalten in Semiconductors 11.10.2023: 1-6
	3	Polarization-Spectral Dependences of the Three-Photon Interband Absorption of Light and Linear-Circular Dichroism in Semiconductors with Cubic Symmetry Enthalten in Semiconductors 23.12.2022: 1-6
	4	Crystal Structure, Optical Properties, and Characteristics of the Band Gap of Ca2Si Semiconductor Films on an Al2O3(0001) Substrate Enthalten in Semiconductors 10.10.2022: 1-7
	5	Effect of Sacrificial Mg2Si Layers and Kinetic Parameters on the Growth, Structure, and Optical Properties of Thin Ca2Si Films on Silicon Substrates Enthalten in Semiconductors 10.10.2022: 1-15
	6	Dynamics of Wide-Aperture Heterolasers with a Phase Shift in Bragg Structures Enthalten in Semiconductors 30.9.2022: 1-7
	7	Properties of GaInAsSb/GaSb (λ = 1.8–2.3 μm) immersion lens photodiodes at 20–140°C Enthalten in Semiconductors Bd. 41, Nr. 11, date:11.2007: 1369-1374
	8	Experimental investigation of effect of aromatic hydrocarbons on resistivity of indium selenide Enthalten in Semiconductors Bd. 41, Nr. 10, date:10.2007: 1197-1200
	9	Anomalous dependences of the diode barrier capacitance on bias voltage and temperature Enthalten in Semiconductors Bd. 41, Nr. 10, date:10.2007: 1189-1196
	10	Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2-n-Si heterostructures Enthalten in Semiconductors Bd. 41, Nr. 9, date:9.2007: 1117-1125

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